Fundamentals of semiconductor devices / Betty Lise Anderson, Richard L. Anderson
Material type:
TextPublisher: Boston : McGraw-Hill Higher Education, [2005]Copyright date: ©2005Description: xv, 800 pages : illustrations ; 24 cmContent type: - text
- unmediated
- volume
- 0072369779
- 621.38152 22 A.B.F
| Item type | Current library | Collection | Call number | Status | Date due | Barcode | |
|---|---|---|---|---|---|---|---|
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Main library B3 | Faculty of Engineering & Technology (Electrical) | 621.38152 A.B.F (Browse shelf(Opens below)) | Available | 00000780 |
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| 621.3815 T Textbook of digital electronics : for ug electrical & electronics, electronics & communications, electronics & instrumentation and for pg vlsi design and embedded systems / | 621.3815 T.C.L Linear circuit analysis / | 621.3815 W.W.M Millimeter-wave digitally intensive frequency generation in CMOS / | 621.38152 A.B.F Fundamentals of semiconductor devices / | 621.38152 C. Characterization in compound semiconductor processing / | 621.38152 C.J.P. Power electronics / | 621.38152 K.K.S Semiconductor devices / |
Includes bibliographical references (pages 790-792) and index.
Part 1 Electronic Properties of Materials -- 1 Electron Energy and States in Semiconductors -- 2 Homogeneous Semiconductors -- 3 Current Flow in Homogeneous Semiconductors -- 4 Non-Homogeneous Semiconductors -- Part 2 Diodes -- 5 Prototype pn Homojunctions -- 6 Additional Considerations for Diodes -- Part 3 Field Effect Transistors -- 7 The MOSFET -- 8 Additional Considerations for FETs -- Part 4 Bipolar Transistors -- 9 Bipolar Junction Devices: Statics -- 10 Time-Dependent Analysis of BJTs -- Part 5 Optoelectronic Devices -- 11 Optoelectronic Devices -- Appendix A Physical Constants -- Appendix B List of Symbols -- Appendix C Fabrication -- Appendix D Density of States Function, Density of States Effective Mass, Conductivity Effective Mass -- Appendix E Useful Integrals -- Appendix F Useful Equations -- Appendix G: List of Suggested Readings
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