| 000 | 02205cam a22003374i 4500 | ||
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| 999 |
_c2376 _d2376 |
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| 001 | 13402662 | ||
| 005 | 20201228125211.0 | ||
| 008 | 031113s2005 maua b 001 0 eng | ||
| 020 | _a0072369779 | ||
| 040 |
_aDLC _erda _cDLC _dDLC _beng |
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| 082 | 0 | 0 |
_a621.38152 _222 _bA.B.F |
| 100 | 1 |
_aAnderson, Betty Lise. _99803 _eauthor. |
|
| 245 | 1 | 0 |
_aFundamentals of semiconductor devices / _cBetty Lise Anderson, Richard L. Anderson |
| 264 | 1 |
_aBoston : _bMcGraw-Hill Higher Education, _c[2005] |
|
| 264 | 4 | _c©2005 | |
| 300 |
_axv, 800 pages : _billustrations ; _c24 cm |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_aunmediated _bn _2rdamedia |
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| 338 |
_avolume _bnc _2rdacarrier |
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| 504 | _aIncludes bibliographical references (pages 790-792) and index. | ||
| 505 | 0 | _aPart 1 Electronic Properties of Materials -- 1 Electron Energy and States in Semiconductors -- 2 Homogeneous Semiconductors -- 3 Current Flow in Homogeneous Semiconductors -- 4 Non-Homogeneous Semiconductors -- Part 2 Diodes -- 5 Prototype pn Homojunctions -- 6 Additional Considerations for Diodes -- Part 3 Field Effect Transistors -- 7 The MOSFET -- 8 Additional Considerations for FETs -- Part 4 Bipolar Transistors -- 9 Bipolar Junction Devices: Statics -- 10 Time-Dependent Analysis of BJTs -- Part 5 Optoelectronic Devices -- 11 Optoelectronic Devices -- Appendix A Physical Constants -- Appendix B List of Symbols -- Appendix C Fabrication -- Appendix D Density of States Function, Density of States Effective Mass, Conductivity Effective Mass -- Appendix E Useful Integrals -- Appendix F Useful Equations -- Appendix G: List of Suggested Readings | |
| 650 | 0 | _aSemiconductors. | |
| 650 | 0 | _aTransistors. | |
| 700 | 1 |
_aAnderson, Richard L. _99806 _eauthor. |
|
| 856 | 4 | 1 |
_3Table of contents _uhttp://www.loc.gov/catdir/toc/mh041/2003067537.html |
| 856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/description/mh041/2003067537.html |
| 906 |
_a7 _bcbc _corignew _d1 _eocip _f20 _gy-gencatlg |
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| 942 |
_2ddc _cBK |
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