000			04864nam a22002777i 4500
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005			20201220161754.0
008			100921s2006 ii||||| |||| 00| 0 eng d
020			_a8122414478
020			_a9788122414479
040			_aEG-NcFUE _erda
082	0	4	_221 _a621.3813 _bS.M.M
100	1		_aSisodia, M. L. _99814 _eauthor.
245	1	0	_aMicrowave active devices : _bvacuum and solid state / _cM. L. Sisodia.
264		1	_aNew Delhi : _bNew Age International, _c[2006]
264		4	_ccopyright 2006
300			_a1 volumes (various pagings) : _billustrations ; _c24 cm
336			_atext _btxt _2rdacontent
337			_aunmediated _bn _2rdamedia
338			_avolume _bnc _2rdacarrier
500			_aIncludes index.
505	0		_a1. Introduction -- 1.1. Microwave Frequencies/Bands --1.2, Overview of Applications of Microwaves --1.3. Some Microwave Sources and Amplifiers -- 1.4. General Operating Principles --1.5. Format of the book -- 2._Electron Booms -- 2.1, Introduction -- 22, Electron Emission Basics -- 23. Flow of Electrons Between Cathode and Anode -- 24. Electron Flow in Cylindrical Beams—Space Charge Spreading -- 2.5. Beam Focusing Basics -- 2.6, Electron Guns -- 2.7, Effect of Thermal Velocities -- 2.8 Space-Charge Effects in Electron Beams -- 3. Velocity Modulated Cavity-Type Microwave Linear-Beam Tubes (O-Type) -- 3.1, Introduction -- 3.2 Two Cavity Klystron -- 3.3. Multi cavity Klystron Amplifier -- 3.4, Reflex Klystron -- 3.5, Millimetre-Wave (10 mm to 1 mm) O-type Resonant Cavity Generators -- 3.6 Hybrid Klystrode/inductive output Tube (IOT) aad Extended Interaction klystron (EIK) -- 3.7, Recent Developments and Indigenous Efforts -- 3.8. Baseline Kiystron Design Procedure -- 3.9 Modelling end Simulation -- 3.10 Klystron Applications -- 4. Microwave Linear-Beam Tubes (O-Type) with Periodic Shaw-Wave Structures -- 4.1. Introduction -- 4.2, Helix Travelling-Wave Tubes -- 4.3. Coupled-Cavity Travelling-Wave Tube (OCTWT) -- 4.4. Gridded Control Travelling-Wave Tubs (GCTWT) -- 4.5. Backward Wave Devices -- 4.6. Millimetre and Submillimetre O-Type Tubes -- 4.7, Hybrid Twystron -- 4.8. Recent Developments -- 4.9 Base-line Design procedure of TWT -- 4.10. Indigenous Efforts -- 5. Microwave Crossed — Field Tubes (M-Type) -- 5.1 introduction -- 5.2. Magnetrons -- 5.3. Other Versions of a Magnetron -- 5.4. Crossed-Field Amplifiers (CFAs) --5.6, Some Recent Developments -- 5.7, indigenous Efforts -- 5.8. Simulations and Base-tine Design Procedure of a Multicavity Magnetron -- 6 Gyrodevices, Other High Power Microwave Sources and Vacuum Microelectronics -- 6.1 Fest-wave Gyrodevices -- 6.2. Ubitron/Free Electron Laser -- 6.3, Intense Relativistic Electron Beam Devices -- 6.4. Virtual Cathode Oscillator (VIRCATOR) --6.5. Vacuum Microelectronics -- 7. Two-Terminal Microwave Solid State Devices— Tunnelling Devices, Varactor and p-i-n Diodes -- 7.1. Introduction -- 72 Tunnelling Devices -- 7.3 Varactor Diodes And Their Applications -- 7.4, p-i-n Diodes And Their Applications -- 8. Impact lonization Avalanche Transit-time Devices -- 8.1. Introduction -- 82. The Read Diode -- 8.3. IMPATT Diodes -- 84, Tunnel Injection Transit-time Diodes (TUNNETT Diodes) and Hetero junction IMPATTs -- 8.5, Barrier Injection Transit-time Devices (BARITTs) -- 8.6 Trapped Plasma Avalanche Triggered Transit-time (TRAPATT) Devices -- 8.7. IMPATT Diode Power Combining -- 9. Transferred Electron Devices (TEDs) : Guam Devices -- 9.1 introduction -- 9.2 Gunn Effect -- 9.3 Electron Transfer and Negative Differential Mobility In Multivalley Semiconductors -- 9.4 High-field Domains in NDM Semiconductors -- 9.5 Expected Maximum Power Conversion Efficiency -- 9.6 Modes of Operation of TEDs -- 9,7, Millimetre-Wave Operation of TEDs—laP TEDs -- 9.8. Dead-Zone Effect/Injection-Controlled Devices -- 9.9 Other Developments -- 9.10. Transfer-electron Device Oscillator Circuit -- 10. Three-Terminal Microwave Bipolar Solid State Devices -- 10.1 Introduction --10.2 Microwave Bipolar Junction Transistors (BJT) -- 10.3 Heterojunction Bipolar Transistors (HBTs) -- 10.4 Some Other Newer Types of Transistors/Devices -- 11. Three Terminal Unipolar Microwave Transistors : MESFETs and HFETs -- 1.1 Introduction -- 11.2. GaAs Metal Semiconductor Field Effect Transistors 11.3 Heterojunction Field-Effect ‘Transistors (HFETs) -- 113.1 Introduction -- 11.4, Other Heterojunction HFETs -- 11.5, HFET's Noise Figure And Gain -- 11.6. SiC end GaN Based High Power Microwave Semiconductor Devices -- 11.7, Indigenous Efforts -- 12 Vacuum Processing of Microwave Tubes and Technologies of Microwave Solid State Devices -- 12.1 Vacuum Processing of Microweve Tubes -- 12.2, Technologies of Solid State Devices
650		0	_aMicrowave devices.
650		0	_aMicrowave circuits.
942			_2ddc _cBK