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| 008 | 100921s2007 ii||||f |||| 00| 0 eng d | ||
| 020 | _a8184312180 | ||
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_aEG-NcFUE _erda |
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| 082 | 0 | 4 |
_221 _a621.38152 _bC.J.P. |
| 100 | 1 |
_aChitode, J.S. _99870 _eauthor. |
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| 245 | 1 | 0 |
_aPower electronics / _cJ.S.Chitode. |
| 250 | _a2nd edtion | ||
| 264 | 1 |
_aPune : _bTechnical Publications , _c2007. |
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| 300 |
_a1 volumes (various pagings) : _bforms ; _c26 cm |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_aunmediated _bn _2rdamedia |
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| 338 |
_avolume _bnc _2rdacarrier |
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| 505 | 0 | _aChapter 1 Power Devices and Commutation Circuits -- 1.1 Introduction -- 1.1.1 Applications of Power Electronics -- 1.1.2 Advantages and Disadvantages of Power Electronic Controllers -- 1.1.3 Block Diagram of Power Electronic Controller --1.2 Types of Power Electronic Converters -- 1.2.1 AC to DC Converters -- 1.2.2 DC to AC Converters (Inverters) -- 1.2.3 DC to DC Converters (Choppers) -- 1.2.4 AC to AC Converters (Cycloconverters) -- 1.2.5 AC Regulators -- 1.3 Power Semiconductor Devices -- 1.4 Power Diodes -- 1.4.1 Structure of Power Diode -- 1.4.2 I-V Characteristics -- 1.4.3 Switching Characteristics of Diodes -- 1.4.4 Types of Diodes -- 1.4.5 Applications of Power Diodes -- 1.4.6 Specifications and Ratings of Power Diodes -- 1.5 Silicon Controlled Rectifier (SCR) -- 1.5.1 Construction of SCR -- 1.5.2 Merits, Demerits and Applications of SCR -- 1.6 SCR Characteristics and Modes of Operation -- 1.6.1 Reverse Blocking Mode -- 1.6.2 Forward Blocking Mode -- 1.6.3 Forward Conduction Mode -- 1.6.4 Latching and Holding Currents -- 1.6.5 Two Transistor Model of SCR -- 1.7 SCR Turn-on and Turn-off -- 1.7.1 Different Ways to Turn-on the SCR -- 1.7.2 Turn-on Dynamic Characteristics -- 1.7.3 SCR Turn-off -- 1.7.4 Turn-off Dynamic Characteristics -- 1.7.5 Inverter Grade and Converter Grade SCRs -- 1.8 SCR Gate Characteristics -- 1.8.1 Pulsed Gate Drive -- 1.8.2 Requirement of Gate Drive -- 1.9 SCR Ratings -- 1.9.1 Current Ratings -- 1.9.2 Voltage Ratings -- 1.10 Thyristor Types -- 1.10.1 Gate Turn-off Thyristor (GTO) -- 1.10.2 Light Activated SCR (LASCR) -- 1.10.3 Reverse Conducting Thyristor (RCT) -- 1.10.4 Triac (Bidirectional Triode Thyristors) -- 1.10.5 MOS Controlled Thyristor (MCT) -- 1.11 Series and Parallel Operation of Thyristors -- 1.11.1 Necessity of Series and Parallel Connection -- 1.11.2 Series Connection of Thyristors -- 1.11.3 Parallel Connection of Thyristors -- 1.12 Power BJT -- 1.12.1 Structure of BJT -- 1.12.2 Steady State Characteristics of BJT -- 1.12.3 Safe Operating Area (SOA) of BJT -- 1.12.4 Switching Characteristics of BJT -- 1.12.5 Merits, Demerits and Applications of BJT -- 1.13 Power MOSFET -- 1.13.1 Structure of MOSFETs -- 1.13.2 Steady State (V-I) Characteristics of MOSFETs -- 1.13.3 Switching Characteristics of MOSFET -- 1.13.4 Merits, Demerits and Applications of MOSFETs -- 1.14 IGBT -- 1.14.1 Structure of IGBT -- 1.14.2 Safe Operating Area (SOA) of IGBT -- 1.14.3 Steady State (V-I) Characteristics of IGBT -- 1.14.4 Switching Characteristics of IGBT -- 1.14.5 Merits, Demerits and Applications of IGBT -- 1.14.6 Comparison of Power Devices -- 1.15 Firing Circuits for the SCR -- 1.15.1 Features of Firing Circuits -- 1.15.2 R-Firing Circuit -- 1.15.3 RC Firing Circuit -- 1.15.4 Full Wave RC-Firing Circuit -- 1.15.5 UJT Triggering Circuit -- 1.15.6 Pedestal Circuit with Cosine Modified Ramp -- 1.15.7 SCR/TRIAC Triggering using Diac -- 1.16 Drive Circuits for BJT -- 1.16.1 Base Drive Control During Turn-on -- 1.16.2 Base Drive Control During Turn-off -- 1.16.3 Proportional Base Control -- 1.16.4 Anti-saturation Control -- 1.16.5 Typical Driver Circuit for Power BJT -- 1.17 Drive Circuit for MOSFET -- 1.18 Driver Circuit for IGBT and MOSFET -- 1.19 Isolation of Gate and Base Drives | |
| 650 | 4 | _aPower electronics. | |
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