| 000 | 03432nam a2200361 i 4500 | ||
|---|---|---|---|
| 999 |
_c2414 _d2414 |
||
| 001 | 1198780 | ||
| 005 | 20210926104849.0 | ||
| 008 | 980609t19981999maua f 001 0 eng d | ||
| 010 | _a 98028075 | ||
| 020 | _a0072925078 | ||
| 040 |
_aDLC _cDLC _dDLC _erda |
||
| 082 | 0 | 0 |
_a621.395 _221 _bK.S.C. |
| 100 | 1 |
_aKang, Sung-Mo, _d1945-, _99951 _eauthor. |
|
| 245 | 1 | 0 |
_aCMOS digital integrated circuits : _banalysis and design / _cSung-Mo (Steve) Kang, Yusuf Leblebici. |
| 250 | _aSecond edition | ||
| 264 | 1 |
_aBoston, MA : _bMcGraw-Hill, _c[1998] |
|
| 264 | 4 | _c©1999 | |
| 300 |
_axv, 658 pages : _billustrations ; _c25 cm |
||
| 336 |
_2rdacontent _atext |
||
| 337 |
_2rdamedia _aunmediated |
||
| 338 |
_2rdacarrier _avolume |
||
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | 0 | _ach. 1 Introduction -- 1.1. Historical Perspective -- 1.2. Objective and Organization of the Book -- 1.3. A Circuit Design Example -- ch. 2 Fabrication of MOSFETs -- 2.1. Introduction -- 2.2. Fabrication Process Flow: Basic Steps -- 2.3. The CMOS n-Well Process -- 2.4. Layout Design Rules -- 2.5. Full-Custom Layout Design Rules -- ch. 3 MOS Transistor -- 3.1. The Metal Oxide Semiconductor (MOS) Structure -- 3.2. The MOS System Under External Bias -- 3.3. Structure and Operation of the MOS Transistor (MOSFET) -- 3.4. MOSFET Current-Voltage Characteristics -- 3.5. MOSFET Scaling and Small-Geometry Effects -- 3.6. MOSFET Capacitances -- ch. 4 Modelling of MOS Transistors Using SPICE -- 4.1. Basic Concepts -- 4.2. The Level 1 Model Equations -- 4.3. The Level 2 Model Equations -- 4.4. The Level 3 Model Equations -- 4.5. Capacitance Models -- 4.6. Comparison of the SPICE MOSFET Models -- ch. 5 MOS Inverters: Static Characteristics -- 5.1. Introduction -- 5.2. Resistive-Load Inverter -- 5.3. Inverters with MOSFET Load -- 5.4. CMOS Inverter -- ch. 6 MOS Inverters: Switching Characteristics and Interconnect Effects -- 6.1. Introduction -- 6.2. Delay-Time Definitions --6.3. Calculation of Delay Times -- 6.4. Inverter Design with Delay Constraints -- 6.5. Estimation of Interconnect Parasitics -- 6.6. Calculation of Interconnect Delay -- 6.7. Switching Power Dissipation of CMOS Inverters -- ch. 7 Combinational MOS Logic Circuits -- 7.1. Introduction -- 7.2. MOS Logic Circuits with Pseudo-nMOS (pMOS) Loads -- 7.3. CMOS Logic Circuits -- 7.4. Complex Logic Circuits -- 7.5. CMOS Transmission Gates (Pass Gates) -- ch. 8 Sequential MOS Logic Circuits -- 8.1. Introduction -- 8.2. Behaviour of Bistable Elements -- 8.3. The SR Latch Circuit -- 8.4. Clocked Latch and Flip-Flop Circuits -- 8.5. CMOS D-Latch and Edge-Triggered Flip-Hop -- ch. 9 Dynamic Logic Circuits -- 9.1. Introduction -- 9.2. Basic Principles of Pass Transistor Circuits -- 9.3. Voltage Bootstrapping -- 9.4. Synchronous Dynamic Circuit Techniques -- 9.6. High-Performance Dynamic CMOS Circuits -- | |
| 650 | 0 | _aMetal oxide semiconductors, Complementary. | |
| 650 | 0 | _aDigital integrated circuits. | |
| 700 | 1 |
_aLeblebici, Yusuf. _99954 _eauthor. |
|
| 856 | 4 | 2 |
_3Publisher description _uhttp://www.loc.gov/catdir/description/mh023/98028075.html |
| 856 | 4 | 1 |
_3Table of contents _uhttp://www.loc.gov/catdir/toc/mh022/98028075.html |
| 906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
||
| 942 |
_2ddc _cBK |
||