000			01909nam a2200361 i 4500
999			_c8668 _d8668
001			70783640
003			EG-NcFUE
005			20230511134339.0
008			060731s2006 sz a b 001 0 eng d
020			_a2940222096 (EPFL Press)
020			_a0824725697 (CRC Press)
040			_aFQG _cFQG _dBAKER _erda
050			_aTK7871.85 _b.L545 2006
082	0	4	_221 _a621.38152 _bL.S.P
100	1		_aLinder, Stefan, _d1965- _eauthor.
245	1	0	_aPower semiconductors / _cStefan Linder.
250			_afirst edition
264		1	_aLausanne, Switzerland : _bEPFL Press ; _aBoca Raton, FL : _bDistributed by CRC Press, _c[2006]
264		1	_cc2006.
300			_ax, 267 pages : _billustrations ; _c25 cm
336			_2rdacontent _atext
337			_2rdamedia _aunmediated
338			_2rdacarrier _avolume
490	0		_aEngineering sciences. Electrical engineering.
504			_aIncludes bibliographical references and index.
505	0		_aFundamentals of semiconductor physics -- The p-n Junction -- The Pin Diode -- The Bipolar Transistor -- The Thyristor -- The GTO and GTC / IGTC -- The Power MOSFET -- The IGBT -- List of symbols -- Constants -- Units -- Unit prefixes -- Writing conventions -- Circuit symbols in electrical engineering -- Material properties at 300 K.
520			_aThe aim of this book is to provide an overview of the various types of power semiconductor devices, to give an insight into how they function, and to explain and analyze the characteristics of the various components. All the important classes of power semiconductors are covered. Of particular interest, the author takes into account the role of plasma formation in the operation of highpower semiconductor devices.
650		0	_aPower semiconductors.
650		0	_aThyristors.
650		0	_aMetal oxide semiconductor field-effect transistors.
650		0	_aInsulated gate bipolar transistors.
942			_cBK _2ddc